IBM and Samsung Electronics announce the dramatic progress of the semiconductor
IBM and Samsung Electronics have jointly announced the dramatic progress in semiconductor design using new vertical transistor architecture.
This architecture shows a path for miniaturizing after the nanocyt, and can reduce energy usage by 85 % compared to the miniaturized Fin Field-Effect Transistor (Finfet).
Due to global shortage of semiconductors, the importance of chips is highlighted in the need for investment in semiconductor chips in R & D, and everywhere from computers to home appliances, communication equipment, transportation and transportation, and important infrastructure.。
With the co -creation approach to this innovation, Albany Nanotech Complex has become a global home base for partnerships for semiconductor research and innovation, and supports the demand for semiconductor production and the growth of the global chip industry.
The vertical transistor's breakthrough announced this time will support continuous initiatives in the semiconductor industry to achieve significant improvements:
・ Device architecture that enables scaling of semiconductor devices beyond nanosite ・ Power in process that requires large amounts of power, such as battery cryptoming and data encryption that require no charge for more than one week.In a wide range of environments, such as marine buoys, autonomous cars, and spaceships, such as large reduction in consumption, reduced carbon dioxide emissions, Internet (IoT) of goods (IoT) and edge devices, marine buoys, autonomous cars, and spaceships.Promotion of utilization
MUKESH KHARE, Vice President in charge of IBM Research Hybrid Cloud & System, said:
"Today's technical presentation is about efforts to reconsider how to continue to provide advances to society, improve life and business, and continue to provide innovation that contributes to environmental impact.In the various constraints facing the industry, IBM and Samsung show a joint innovation in semiconductor design and a commitment to "hardtech" we pursue together. "
The "Moore's Law", in which the number of transistors mounted on high -density IC chips is about doubled every two years, is rapidly approaching to the limit.In other words, there is no space to keep stuffing the transistor in a limited area.
Until now, the transistor was flattened on the surface of the semiconductor, and the current was made so that the current flows sideways.The IBM and Samsung have succeeded in realizing a transistor, which is formed vertically on the surface of the chip and flows up and down by the new Vertical Transport Field Effect Transistor (VTFET).
The VTFET formation process challenges the limits of Moore's laws and eliminates various barriers related to performance in which chips designers are trying to pack more transistors in a limited space.
In addition, it is possible to review the connection point of the transistor and reduce the loss by reducing the loss.This new design aims to double the performance or reduce energy power using 85 % compared to the fine Finfet, which is the other technical candidate.
Recently, IBM has announced a 2nm chip technology break -through, and has been able to install up to 50 billion transistors in the space of finger nails.VTFET innovation focuses on a completely new dimension, which leads to the continuation of Moore's law.
Innovation from Albany Nanotech Complex is often directly linked to commercialization.The two companies have announced that Samsung will manufacture IBM's 5nm node chips as the final stage of the Chip Development Life Cycle.
These chips are expected to be used for the IBM's own server platform.In 2018, Samsung announced that it would manufacture IBM's 7nm chips, and began to be installed on the IBM Power10 family server earlier this year.Samsung is also manufactured by IBM Telum processors this year, as well as IBM design.
In the semiconductor, the historic breakthrough that IBM has accomplished so far has the first implementation of 7nm and 5nm process technology, high-k metal gate technology, SIGE Chanelertransister, Single Cell DRAM, Denade Scaling Rules, Chemical amplification, chemical amplification.Photogist, copper multilayer wiring, Silicon on Insulator technology, multi -core micro processor, envy -DRAM, 3D chip stacking, etc.
Related information: https: // NewsRoom.IBM.COM/2021-12-14-IBM-And-SAMSUNG -UNVEIL-SEMICONDUCTOR -BREAKTHROUGH-THAT-DEFIES-CONVENTINTIONAL-DESIGN
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